30 v n-channel enhancement mode mosfet ME60N03 01 a p r , 2007 ? version 4.1 parameter symbol limit unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 50 a pulsed drain current i dm 100 a t a =25 50 maximum power dissipation t a =70 p d 23 w operating junction and storage temperature range t j, t stg -55 to 150 avalanche energy with single pulse(l=0.5mh,rg=25 ) e as 110 mj tQ10 sec 15 thermal resistance-junction to ambient * r ja steady state 40 /w thermal resistance-junction to case r jc 20 /w v ds =30v r ds(on) , vgs@10v,ids@30a = 8.5m r ds(on) , vgs@4.5v,ids@20a =13m features advanced trench process technology high density cell design for ultra low on-resistance specially designed for dc/dc converters and motor drivers fully characterized avalanche voltage and current pin configuration (to-252) top view absolute maximum ratings (t a =25 unless otherwise noted) *the device mounted on 1in 2 fr4 board with 2 oz copper
30 v n-channel enhancement mode mosfet ME60N03 02 a p r , 2007 ? version 4.1 symbol parameter limit min typ max unit static bv dss drain-source breakdown voltage v gs =0v, i d =250 a 30 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 1 1.6 3 v i gss gate-body leakage v ds =0v, v gs =20v 100 na i dss zero gate voltage drain current v ds =24v, v gs =0v 1 a v gs =10v, i d =30a 6.5 8.5 r ds(on) drain-source on-resistance v gs =4.5v, i d =20a 10 13 m dynamic qg total gate charge 22 25 qgs gate-source charge 4.5 qgd gate-drain charge v ds =15v, v gs =10v, i d =35a 4 nc c iss input capacitance 1100 1300 c oss output capacitance 240 c rss reverse transfer capacitance v ds =15v, v gs =0v, f=1mhz 90 pf rg gate resistance v ds =0v, v gs =0v, f=1mhz 2.5 t d(on) turn-on delay time 13 17 t r turn-on rise time 10 13 t d(off) turn-off delay time 46 58 t f turn-off fall time r l =15 , v gen =10v, i d =1a v dd =15v, r g =24 7 10 ns source-drain diode i s max.diode forward current 20 a v sd diode forward voltage i s =20a, v gs =0v 0.87 1.5 v note: pulse test: pulse width =300us, duty cycle =2 electrical characteristics (t a =25 unless otherwise specified)
30 v n-channel enhancement mode mosfet ME60N03 03 a p r , 2007 ? version 4.1 typical characteristics (t j =25 noted)
30 v n-channel enhancement mode mosfet ME60N03 04 a p r , 2007 ? version 4.1 typical characteristics (t j =25 noted)
30 v n-channel enhancement mode mosfet ME60N03 05 a p r , 2007 ? version 4.1 millimeters (mm) symbol min max a 2.00 2.50 a1 0.90 1.30 b 0.50 0.85 b1 0.50 0.80 b2 0.50 1.00 c 0.40 0.60 d 5.20 5.70 d2 6.50 7.30 d3 2.20 3.00 h 9.50 10.50 e 6.30 6.80 e2 4.50 5.50 l 1.30 1.70 l1 0.90 1.70 l2 0.50 1.10 l3 0 0.30 p 2.00 2.80 to-252 packa g e outline
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